High-temperature resistant device and method for fabricating the same
AssigneeIndustrial Technology Research Institute
InventorsYu-Hsiang Hsu, Hsueh-Ping Weng
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Abstract
A method for fabricating a high-temperature resistant device includes providing a tantalum substrate as a device body, performing an oxidation treatment on the tantalum substrate in an oxygen-containing environment to form a tantalum oxide layer on a surface of the tantalum substrate, and then embedding the tantalum substrate after the oxidation treatment in a carbonaceous matter for performing a carbonization reaction in an inert gas, so that the tantalum oxide layer is transformed into a tantalum carbide layer. A temperature of the oxidation treatment is between 100° C. and 1100° C.
Claims12
A method for fabricating a high-temperature resistant device, comprising:
- providing a tantalum substrate as a device body;
- performing an oxidation treatment on the tantalum substrate in an oxygen-containing environment to form a tantalum oxide layer on a surface of the tantalum substrate, wherein a temperature of the oxidation treatment is between 100° C. and 1100° C.;
- and
- embedding the tantalum substrate after the oxidation treatment in a carbonaceous matter for performing a carbonization reaction in an inert gas, so that the tantalum oxide layer is transformed into a tantalum carbide layer.
A high-temperature resistant device, comprising:
- a tantalum substrate;
- and
- a tantalum carbide layer, being a layer formed on a surface of the tantalum substrate, wherein
- a thickness of the tantalum carbide layer is between 2 μm and 100 μm.
Dependencies are inferred from the claim text.