Resonant circuit device comprising qubit and method for manufacturing the same
AssigneePostech Research and Business Development Foundation
InventorsJae Yoon SHIM, Seung Young SEO
Life of this patent
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Abstract
A resonant circuit device is provided. A resonant circuit device comprising a qubit, comprising: a first qubit; a first lower electrode disposed spaced apart from the first qubit in a first direction; an insulating layer disposed on the first qubit and the first lower electrode; a first upper electrode disposed on the insulating layer; a first through via connecting the first qubit and the first upper electrode and disposed through the insulating layer; and a second through via connecting the first upper electrode and the first lower electrode and disposed through the insulating layer.
Claims20
A resonant circuit device comprising a qubit, comprising:
- a first qubit;
- a first lower electrode disposed spaced apart from the first qubit in a first direction;
- an insulating layer disposed on the first qubit and the first lower electrode;
- a first upper electrode disposed on the insulating layer;
- a first through via connecting the first qubit and the first upper electrode and disposed through the insulating layer;
- and
- a second through via connecting the first upper electrode and the first lower electrode and disposed through the insulating layer.
A resonant circuit device comprising a qubit, comprising:
- a first layer comprising a first qubit and a plurality of lower electrodes disposed spaced apart from the first qubit in a first direction;
- an insulating layer on the first layer;
- and
- a second layer disposed on the insulating layer and comprising a plurality of upper electrodes,
- wherein the insulating layer comprises:
- a plurality of through vias connecting each of the plurality of lower electrodes and each of the plurality of upper electrodes and passing through the insulating layer;
- and
- a first through via connecting a first portion of a first upper electrode of the plurality of upper electrodes and the first qubit and passing through the insulating layer, and
- wherein a resonant frequency is determined based on a combined number of the plurality of through vias and the first through via.
A method of manufacturing a resonant circuit device comprising a qubit, comprising:
- forming a first layer comprising a first qubit and a plurality of lower electrodes disposed spaced apart from the first qubit;
- forming an insulating layer on the first layer;
- forming a patterned first mask layer on the insulating layer;
- forming a plurality of through via holes, which passes through the insulating layer, exposes part of the first qubit, and exposes part of each of the plurality of lower electrodes, based on the patterned first mask layer;
- forming a plurality of through vias by filling the plurality of through via holes with a through via material;
- forming a through via material layer by covering an upper surface of the insulating layer and the plurality of through vias with the through via material;
- forming a patterned second mask layer on the through via material layer;
- and
- forming a plurality of upper electrodes, which exposes part of the upper surface of the insulating layer and is connected to each of the plurality of through vias, based on the patterned second mask layer.
Dependencies are inferred from the claim text.