Resistor structure and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPING-HSIANG HUANG, YOU-SHIUN CHOU, CHU FU CHEN
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Abstract
A resistor structure is provided. The resistor structure includes a substrate, a first well region formed in the substrate, a poly layer over the first well region, an isolation structure disposed between the poly layer and the first well region, and an interconnect structure. The poly layer has a first end, a second end and a point between the first and second ends. The interconnect structure is electrically connected between the point of the poly layer and the first well region.
Claims20
A resistor structure, comprising:
- a substrate;
- a first well region formed in the substrate;
- a poly layer over the first well region, having a first end, a second end and a point between the first and second ends;
- an isolation structure disposed between the poly layer and the first well region;
- and
- an interconnect structure electrically connected between the point of the poly layer and the first well region.
A resistor structure, comprising:
- a substrate;
- and
- a resistor string over the substrate and comprising a plurality of poly resistors connected in series,
- wherein each of the poly resistors comprises:
- a first well region formed in the substrate;
- a poly layer over the first well region, having a first end, a second end and a point between the first and second ends;
- an isolation structure disposed between the poly layer and the first well region;
- and
- an interconnect structure configured to provide a bias voltage from the point of the poly layer to the first well region,
- wherein the first well regions of the poly resistors are separated by the substrate.
A method for manufacturing a resistor structure, comprising:
- forming a first well region in a substrate;
- forming an isolation structure in the first well region;
- forming a poly layer over the isolation structure;
- and
- forming an interconnect structure between a point of the poly layer and the first well region.
Dependencies are inferred from the claim text.