Circuit protection systems and related methods

A circuit protection system comprising:

• a sensing field effect transistor, a gate of the sensing field effect transistor configured to be coupled with a gate of a silicon carbide field effect transistor;
• and
• a driver integrated circuit comprising:
• a first transistor coupled with a reference current source configured to generate a reference voltage;
• a second transistor coupled with a constant current source, a gate of the second transistor coupled to the reference voltage;
• and
• a first comparator coupled to the source of the second transistor, the first comparator configured to generate a first output voltage signal corresponding with an over current condition when a sensing current from a drain of the sensing field effect transistor is equal to or greater than the constant current source;
• wherein the driver integrated circuit is configured to receive the first output voltage signal identifying an overcurrent condition and, in response, shut down operation of the silicon carbide field effect transistor.

A method of protecting a field effect transistor, the method comprising:

• providing a sensing field effect transistor, a gate of the sensing field effect transistor coupled with a gate of a field effect transistor and a driver integrated circuit, the driver integrated circuit comprising:
• a first transistor coupled with a reference current source;
• a second transistor coupled with a constant current source;
• and
• a first comparator coupled to the source of the second transistor,
• generating a reference voltage with the first transistor and the reference current source where a gate of the second transistor coupled to the reference voltage;
• when a sensing current from the drain of the sensing field effect transistor is equal to or greater than the constant current source, generating a first output voltage signal corresponding with an overcurrent condition using the first comparator;
• receiving the first output voltage signal identifying the overcurrent condition at the driver integrated circuit;
• further providing:
• a fourth transistor coupled with the sensing current from the drain of the sensing field effect transistor and with the reference current source;
• a third transistor coupled with the fourth transistor;
• and
• a second comparator coupled with the source of the fourth transistor;
• when the sensing current from a drain of the sensing field effect transistor is equal to or greater than the constant current source, allowing current flow through the third transistor and corresponding current flow through the fourth transistor through a current mirror;
• if the current flowing through the fourth transistor is greater than the constant current source, generating a second output voltage signal indicating a short circuit condition using the second comparator;
• and
• receiving the second output voltage signal identifying the short circuit condition at the driver integrated circuit.