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US 2026/0126719 A1Published application
Photomask having recessed region
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Yu CHEN, Chi-Hung LIAO
Life of this patent
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Abstract
A method includes disposing a photoresist layer over a wafer. The photoresist layer is exposed by using a photomask. The photoresist layer is developed with a developer solution. The photomask includes a substrate having a recess therein and a main feature over the substrate. A width of the main feature is greater than a width of the recess in a top view, and a depth of the recess is less than about one third of a height of the main feature in a cross-sectional view.
Claims20
A method comprising:
- disposing a photoresist layer over a wafer;
- exposing the photoresist layer by using a photomask comprising:
- a substrate having a recess therein;
- and
- a main feature over the substrate, wherein a width of the main feature is greater than a width of the recess in a top view, and a depth of the recess is less than about one third of a height of the main feature in a cross-sectional view;
- and
- developing the photoresist layer with a developer solution.
4 more elements
A method comprising:
- providing a wafer with a photoresist layer formed thereon;
- providing a radiation to a photomask to expose the photoresist layer, wherein the photomask comprises:
- a substrate having a first recess and a second recess;
- a first main feature and a second main feature over the substrate and having a first pitch therebetween;
- a third main feature spaced apart from the second main feature and having a second pitch therebetween, wherein the second pitch is greater than the first pitch, and the first recess is between the second main feature and the third main feature, the third main feature is between and adjacent to the first recess and the second recess, and the first recess has a first width different from a second width of the second recess;
- and
- developing the photoresist layer after exposing the photoresist layer.
4 more elements
A method comprising:
- forming a photoresist layer over a wafer;
- exposing the photoresist layer by using a photomask comprising:
- a substrate;
- a main feature over a first surface of the substrate;
- and
- a filling material, wherein at least a portion of the filling material is embedded in the substrate, and a top surface of the filling material is not lower than the first surface of the substrate;
- and
- developing the photoresist layer after exposing the photoresist layer.
5 more elements
Dependencies are inferred from the claim text.