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US 2026/0117124 A1Published application
Etching liquid, etching method, and method for manufacturing semiconductor device
AssigneeMitsubishi Chemical Corporation
InventorsHiroyuki SHIRAE, Tetsuo KASAI, Haru SENDO
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Abstract
The present disclosure relates to an etching liquid containing an alkaline compound (A) and at least one compound (B) selected from the group consisting of an oxidizing agent (B1) and a cationic surfactant (B2).
Claims20
An etching liquid comprising:
- an alkaline compound (A);
- and
- at least one compound (B) selected from the group consisting of an oxidizing agent (B1) and a cationic surfactant (B2),
- wherein ER110/ER100>1,
- where ER110 is an etching rate of a (110) plane of a silicon crystal, and ER100 is an etching rate of a (100) plane of the silicon crystal.
2 more elements
Dependencies are inferred from the claim text.