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US 2026/0116740 A1Published application
Dielectric stack for microelectromechanical system devices and methods of fabrication thereof
AssigneeTexas Instruments Incorporated
InventorsKelly J. Taylor, Jose A. Martinez, Earl V. Atnip, Jessie Yuan, Christopher Beard
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Abstract
A device includes one or more layers of a microelectromechanical system (MEMS) structure and a dielectric stack over the one or more layers. The dielectric stack includes a first dielectric layer having a first index of refraction, and a second dielectric layer having a second index of refraction different than the first index of refraction.
Claims20
A device, comprising:
- one or more layers of a microelectromechanical system (MEMS) structure;
- and
- a dielectric stack over the one or more layers, the dielectric stack including:
- a first dielectric layer having a first index of refraction;
- and
- a second dielectric layer having a second index of refraction different than the first index of refraction.
3 more elements
A device, comprising:
- a MEMS substrate;
- a hinge over the MEMS substrate;
- a mirror structure supported by the hinge;
- and
- a dielectric stack over the mirror structure, the dielectric stack including:
- a first dielectric layer having a first index of refraction;
- and
- a second dielectric layer having a second index of refraction greater than the first index of refraction.
5 more elements
A method of manufacturing a device, comprising:
- forming a hinge on a MEMS substrate;
- forming a mirror structure on the hinge;
- and
- forming a dielectric stack on the mirror structure, the dielectric stack including a first dielectric layer formed on a surface of the mirror structure, the first dielectric layer having a first index of refraction, and a second dielectric layer formed on the first dielectric layer, the second dielectric layer having a second index of refraction greater than the first index of refraction.
1 more element
Dependencies are inferred from the claim text.