Method and system for producing silicon

Abstract

Device (100, 200) for processing a substance, its oxide and/or its sulphide, the substance being a metal or metalloid, the device (100, 200) comprising a chamber (110, 120, 210, 220), comprising a peripherally arranged off-gas exit (126, 226); a plasma generator device (160, 260), arranged to emit a plasma stream (163, 263) into the chamber (110, 120, 210, 220), the plasma stream (163, 263) comprising the substance, its oxide and/or its sulphide: a first material provision means (130), arranged to provide material (132) comprising the substance, its oxide and/or its sulphide to the plasma generator device (160, 260); a gas provision means (170), arranged to provide an inert (171) and/or reducing (172) gas to the chamber (110, 120, 210, 220); and a vessel (190, 290), into which the plasma stream (163, 263) is directed so that the substance is deposited directly into a melt (191, 291) of the substance arranged in the vessel (190, 290) without first solidifying. The invention also relates to a method.

Dependencies are inferred from the claim text.