Masks, methods of manufacturing masks, and methods of manufacturing semiconductor device

A method of manufacturing a semiconductor device, the method comprising:

• directing extreme ultraviolet (EUV) radiation to a mask;
• and
• reflecting patterned light from the mask and onto a photoresist layer disposed on a semiconductor substrate,
• wherein the mask comprises:
• a reflective multilayered stack disposed over a mask substrate;
• a capping layer disposed over the reflective multilayered stack;
• an absorber layer disposed over the capping layer;
• and
• at least one of:
• a buffer layer disposed between the reflective multilayered stack and the capping layer, and
• a protection layer disposed between the capping layer and the absorber layer,
• wherein the buffer layer comprises one or more of a transition metal element and a compound including a transition metal element, and the protection layer comprises one or more of an oxide including a transition metal element and a chloride including a transition metal element.

A mask for extreme ultraviolet (EUV) photolithography comprising:

• a reflective multilayered stack disposed over a substrate;
• a capping layer disposed over the reflective multilayered stack;
• an absorber layer disposed over the capping layer;
• and
• at least one of:
• a buffer layer disposed between the reflective multilayered stack and the capping layer, and
• a protection layer disposed between the capping layer and the absorber layer,
• wherein the buffer layer comprises one or more of a transition metal element or a compound including a transition metal element, and the protection layer comprises one or more of an oxide including a transition metal element and a chloride including a transition metal element.