Copper interconnect structure and method for fabricating the same
AssigneeChengdu Monolithic Power Systems Co., Ltd.
InventorsJiyan Peng, Zeqiang Yao, Heng Li, Bin Li, Yan Chen
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Abstract
A copper interconnect structure for an integrated circuit chip is provided for forming a good electrical solder connection with a large-sized metal wire easily. The copper interconnect structure includes a copper surface, a metal barrier layer, and a weldable metal layer. The weldable metal layer is formed with a thickness ranging from 0.03 micrometers to 0.05 micrometers over the metal barrier layer.
Claims18
A copper interconnect structure for an integrated circuit chip, comprising:
- a copper surface;
- a metal barrier layer over the copper surface;
- and
- a weldable metal layer over the metal barrier layer, wherein the weldable metal layer has a thickness ranging from 0.03 micrometers to 0.05 micrometers.
A bonding structure including a copper interconnect structure for an integrated circuit, the bonding structure comprising:
- a copper surface;
- a metal barrier layer over the copper surface;
- a weldable metal layer over the metal barrier layer;
- and
- a metal wire bonded to the weldable metal layer, wherein the metal wire has a diameter equal to or greater than 125 micrometers.
A method for fabricating a copper interconnect structure for an integrated circuit chip, the method comprising:
- cleaning a copper surface of a non-oxidized copper;
- performing a first electroless deposition process to plate a metal barrier layer over the copper surface;
- and
- performing a second electroless deposition process to plate a weldable metal layer over the metal barrier layer, wherein the weldable metal layer has a thickness ranging from 0.03 micrometers to 0.05 micrometers.
A method for bonding a copper interconnect structure of an integrated circuit chip and a metal wire, the method comprising:
- cleaning a copper surface of a non-oxidized copper;
- performing a first electroless deposition process to plate a metal barrier layer over the copper surface;
- performing a second electroless deposition process to plate a weldable metal layer over the metal barrier layer, wherein the weldable metal layer has a thickness ranging from 0.03 micrometers to 0.05 micrometers;
- and
- bonding the metal wire onto the weldable metal layer by pressure welding, wherein the metal wire has a diameter equal to or greater than 125 micrometers.
A copper interconnect structure for an integrated circuit chip, comprising:
- a copper pad or a copper redistribution layer;
- a metal barrier layer over the copper pad or the copper redistribution layer;
- and
- a weldable metal layer over the metal barrier layer, wherein the weldable metal layer has a thickness ranging from 0.03 micrometers to 0.05 micrometers.
Dependencies are inferred from the claim text.