Semiconductor package device

A method of fabricating semiconductor package device, comprising:

• providing a carrier;
• forming metal patterns on the carrier;
• forming first posts on the metal patterns;
• forming bonding pads on the first posts, wherein the metal patterns, the first posts and the bonding pads comprise vertical structures;
• providing a first semiconductor chip on the carrier, wherein the vertical structures are disposed around the first semiconductor chip;
• forming a first semiconductor package by forming a lower redistribution substrate on an active surface of the first semiconductor chip;
• and
• attaching a second semiconductor package on the first semiconductor package;
• wherein a diameter of the bonding pads is larger than a diameter of the first posts.

A method of fabricating semiconductor package device, comprising:

• providing a carrier;
• forming a metal pattern on the carrier;
• forming a first post on the metal pattern;
• forming a bonding pad on the first post, wherein the metal pattern, the first post and the bonding pad comprise a vertical structure;
• providing a first semiconductor chip on the carrier;
• forming a first molding member on the carrier, wherein the first molding member covers the first semiconductor chip and the vertical structure;
• and
• forming a lower redistribution substrate on an active surface of the first semiconductor chip;
• wherein a diameter of the bonding pad, a diameter of the metal pattern and a diameter of the first post is different from each other,
• wherein the first molding member is in contact with an edge portion of a bottom surface of the bonding pad.

A method of fabricating semiconductor package device, comprising:

• providing a carrier;
• attaching a seed layer on the carrier;
• forming a metal pattern on the seed layer;
• forming first posts on the metal pattern;
• forming bonding pads on the first posts;
• forming seed patterns by etching a part of the seed layer, wherein etching the part of the seed layer uses the bonding pads as an etching mask and wherein the seed patterns and the metal patterns comprise second posts;
• providing a first semiconductor chip on the carrier, wherein the first posts are disposed around the first semiconductor chip;
• and
• forming a lower redistribution substrate on an active surface of the first semiconductor chip;
• wherein etching the part of the seed layer includes etching side surfaces of the first posts,
• wherein a diameter of the bonding pads is larger than a diameter of the first posts.