Crack-stop metallic structures for composite packages and methods of forming the same

A method of forming a device structure comprising:

• forming a composite die comprising at least one semiconductor die and a first molding compound matrix;
• forming a first redistribution structure on the composite die, wherein the first redistribution structure comprises first redistribution wiring interconnects formed within first redistribution dielectric layers and electrically connected to metal interconnect structures within the at least one semiconductor die;
• disposing a metallic crack-stop structure comprising at least one metallic pillar over a peripheral region of the first redistribution structure;
• attaching a connection die to a center region of the first redistribution structure;
• and
• forming an encapsulation frame around the connection die and the metallic crack-stop structure.

A package structure comprising:

• a first redistribution structure including first redistribution wiring interconnects formed within first redistribution dielectric layers;
• a metallic crack-stop structure comprising at least one metallic pillar and disposed over a peripheral region of the first redistribution structure;
• a connection die attached to a center region of the first redistribution structure;
• an encapsulation frame embedding the connection die and the metallic crack-stop structure;
• and
• a second redistribution structure including second redistribution wiring interconnects formed within second redistribution dielectric layers and located over the connection die, the metallic crack-stop structure, and the encapsulation frame.