Manufacturing method of semiconductor device

A manufacturing method of a semiconductor device, comprising:

• disposing a first semiconductor package and a second semiconductor package on a carrier through a die attach film (DAF);
• encapsulating the first semiconductor package and the second semiconductor package with an encapsulation material, wherein the encapsulation material is laterally disposed aside and surrounding the first semiconductor package and the second semiconductor package;
• flipping the carrier to attach the front surface of the first semiconductor package and the front surface of the second semiconductor package to a first redistribution structure;
• removing the carrier and the DAF from the first semiconductor package and the second semiconductor package to expose a back surface of the first semiconductor package and a back surface of the second semiconductor package;
• and
• depositing a thermal interface material (TIM) layer on the back surface of the first semiconductor package and the back surface of the second semiconductor package,
• wherein a top surface of the TIM layer is coplanar with a top surface of the encapsulation material.

A manufacturing method of a semiconductor device, comprising:

• disposing a first semiconductor package to a carrier through a first die attach film (DAF) disposed therebetween;
• disposing a second semiconductor package to the carrier through a second DAF therebetween, wherein a first forming material of the first DAF is different from a second forming material of the second DAF;
• encapsulating the first semiconductor package and the second semiconductor package with an encapsulation material, wherein the encapsulation material is laterally disposed aside and surrounding the first semiconductor package and the second semiconductor package;
• flipping the carrier to attach the front surface of the first semiconductor package and the front surface of the second semiconductor package to a first redistribution structure;
• removing the carrier, the first DAF, and the second DAF from the first semiconductor package and the second semiconductor package to expose a back surface of the first semiconductor package and a back surface of the second semiconductor package from the encapsulation material;
• and
• disposing a first thermal interface material (TIM) layer and a second TIM layer respectively on the back surface of the first semiconductor package and the back surface of the second semiconductor package,
• wherein a thickness of the first TIM layer is substantially equal to a thickness of the second TIM layer.