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US 2026/0107762 A1Published application
Semiconductor device and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsu-Wei Liu, Ting-Ya LO, Zi Yi Yang, Hsin-Yen Huang, Hsiao-Kang Chang
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Abstract
A semiconductor device includes an interconnect structure including a dielectric structure. The dielectric structure includes a metal-organic dielectric layer, an air gap and an insulating sustaining layer. The insulating sustaining layer surrounds the metal-organic dielectric layer and the insulating sustaining layer is disposed between the metal-organic dielectric layer and the air gap.
Claims20
A semiconductor device, comprising:
- a first conductive feature;
- a second conductive feature;
- a dielectric structure, laterally disposed between the first conductive feature and the second conductive feature, wherein the dielectric structure comprises:
- a metal-organic dielectric layer;
- and
- an air gap disposed below the dielectric layer.
3 more elements
A semiconductor device, comprising:
- an interconnect structure, comprising a dielectric structure, wherein the dielectric structure comprises:
- a metal-organic dielectric layer;
- an air gap;
- and
- an insulating sustaining layer, wherein the insulating sustaining layer surrounds the metal-organic dielectric layer, and the insulating sustaining layer is disposed between the metal-organic dielectric layer and the air gap.
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A method of forming a semiconductor device, comprising:
- forming a plurality of first sacrificial patterns and a trench between the first sacrificial patterns;
- forming a second sacrificial pattern in the trench;
- forming a metal-organic dielectric layer in the trench over the second sacrificial pattern;
- removing the second sacrificial pattern to form an air gap;
- and
- replacing the first sacrificial patterns with conductive features.
3 more elements
Dependencies are inferred from the claim text.