Semiconductor package
AssigneeSamsung Electronics Co., Ltd.
InventorsJaeyoung CHOI, Eunmi KIM, Pil-Kyu KANG, Jae-Wha PARK
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Abstract
A semiconductor package including a first semiconductor chip, where the first semiconductor chip may include a first semiconductor layer, an upper wire structure located on the first semiconductor layer, an upper connection pad located on the upper wire structure, and a first upper conductive pattern located between the upper wire structure and the upper connection pad, where the first upper conductive pattern may include aluminum doped with a metallic material having a lower coefficient of thermal expansion than aluminum.
Claims20
A semiconductor package, comprising:
- a first semiconductor chip comprising
- a first semiconductor layer;
- an upper wire structure on the first semiconductor layer;
- an upper connection pad on the upper wire structure;
- and
- a first upper conductive pattern between the upper wire structure and the upper connection pad,
- wherein the first upper conductive pattern comprises aluminum doped with a metallic material, the metallic material having a lower coefficient of thermal expansion than aluminum.
A semiconductor package, comprising:
- a first semiconductor chip comprising
- a first semiconductor layer;
- an upper wire structure on the first semiconductor layer;
- an upper connection pad on the upper wire structure;
- and
- first upper conductive pattern and a second upper conductive pattern between the upper wire structure and the upper connection pad,
- wherein the first upper conductive pattern comprises aluminum that is not doped with silicon, and
- the second upper conductive pattern comprises aluminum doped with silicon.
A semiconductor package, comprising:
- an interposer;
- a logic die on the interposer;
- and
- a high bandwidth memory on the interposer,
- wherein the high bandwidth memory comprises a first semiconductor chip and a second semiconductor chip, the second semiconductor chip connected to the first semiconductor chip,
- the first semiconductor chip comprises
- a first semiconductor layer;
- an upper wire structure on the first semiconductor layer;
- an upper connection pad on the upper wire structure;
- and
- a first upper conductive pattern between the upper wire structure and the upper connection pad, and
- the first upper conductive pattern comprises aluminum doped with a metallic material, the metallic material having a lower coefficient of thermal expansion than aluminum.
Dependencies are inferred from the claim text.