Method of forming a thin film using hydrogen treatment

A method of forming a thin film comprising:

• providing a substrate in a reaction chamber;
• depositing a transition metal nitride film on the substrate, wherein the depositing the transition metal nitride film comprises:
• pulsing a transition metal precursor, wherein the transition metal precursor comprises a metalorganic precursor comprising at least one amido group, and
• pulsing a nitrogen reactant;
• and
• exposing the transition metal nitride film to a hydrogen treatment form a treated transition metal compound film, wherein the treated transition metal compound film comprises less nitrogen than the transition metal nitride film,
• wherein a pressure during the exposing the transition metal nitride film to the hydrogen treatment is less than about 200 Torr, and
• wherein a temperature within the reaction chamber during the exposing the transition metal nitride film to the hydrogen treatment is from about 300 °C to about 550 °C.