Boron catalyzed dielectric film depositions

A method of depositing a dielectric film in a processing chamber, the method comprising:

• disposing a substrate on a susceptor disposed within a processing chamber;
• providing a first precursor-containing gas mixture into the processing chamber at a first flow rate, wherein the first precursor-containing gas mixture comprises:
• trimethyl borate, trimethylborane, or diborane;
• and
• a carrier gas selected from the group consisting of argon, nitrogen, and helium;
• and
• providing a second precursor-containing gas mixture into the processing chamber at a second flow rate, wherein a ratio of the first flow rate to the second flow rate is about 1:1 to about 1:30.