US 2026/0107705 A1 · HIGH THROUGHPUT CONFORMAL THIN FILM DEPOSITION METHOD WITH LOW PRECURSOR CONSUMPTION

Abstract

The disclosed technology generally relates to forming thin films, and more particularly to high quality, conformal thin films using relatively low amounts of precursor gas, and methods of forming the same. In one aspect, a method of forming a thin film comprises exposing the substrate to one or more vapor deposition cycles in a reaction chamber, wherein exposing the substrate to each vapor deposition cycle comprises exposing the substrate to a first precursor and a second precursor, wherein exposing the substrate to the first precursor and the second precursor is carried out without evacuating to remove a substantial amount of either of the first precursor or the second precursor during and between exposing the substrate to the first precursor and exposing the substrate the second precursor.

Claims22

Dependent claims

A method of forming a thin film, the method comprising:

forming a thin film on a substrate by exposing the substrate to one or more vapor deposition cycles in a reaction chamber, wherein exposing the substrate to each vapor deposition cycle comprises:
exposing the substrate to a first precursor, followed by exposing the substrate to a second precursor,
wherein exposing the substrate to the first precursor and the second precursor is carried out without evacuating the reaction chamber to remove a substantial amount of either of the first precursor or the second precursor during and between exposing the substrate to the first precursor and exposing the substrate to the second precursor.

Dependencies are inferred from the claim text.

High throughput conformal thin film deposition method with low precursor consumption

Life of this patent

High throughput conformal thin film deposition method with low precursor consumption

Life of this patent

Abstract

Claims22