Display device and method of manufacturing display device
AssigneeSamsung Display Co., Ltd.
InventorsDONG HEE SHIN, Dongwan Ha, JUNGHWAN HWANG
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Abstract
Provided is a display device including: a substrate; a thin-film transistor disposed on the substrate; and a light-emitting element electrically connected to the thin-film transistor, wherein the thin-film transistor includes a semiconductor layer and a gate electrode with a first insulating layer between the semiconductor layer and the gate electrode, and the gate electrode includes an opening exposing a portion of the first insulating layer at a position at which the gate electrode overlaps the semiconductor layer.
Claims20
A display device comprising:
- a substrate;
- a thin-film transistor disposed on the substrate;
- and
- a light-emitting element electrically connected to the thin-film transistor,
- wherein the thin-film transistor comprises a semiconductor layer and a gate electrode with a first insulating layer between the semiconductor layer and the gate electrode, and
- the gate electrode includes an opening exposing a portion of the first insulating layer at a position at which the gate electrode overlaps the semiconductor layer.
A method of manufacturing a display device, the method comprising:
- a first operation of sequentially forming a semiconductor layer, a first insulating layer, and a gate electrode on a substrate;
- a second operation of forming a second insulating layer on the gate electrode;
- a third operation of exposing a portion of the gate electrode by patterning the second insulating layer;
- and
- a fourth operation of forming an opening in the gate electrode by removing the exposed portion of the gate electrode,
- wherein the opening is formed at a position overlapping the semiconductor layer.
An electronic device comprising:
- a display device comprising:
- a substrate;
- a thin-film transistor on the substrate;
- and
- a light-emitting element electrically connected to the thin-film transistor,
- wherein the thin-film transistor comprises a semiconductor layer and a gate electrode with a first insulating layer between the semiconductor layer and the gate electrode, and
- the gate electrode includes an opening exposing a portion of the first insulating layer at a position at which the gate electrode overlaps the semiconductor layer.
Dependencies are inferred from the claim text.