Corrugated sidewall structure for memory device

Abstract

Implementations described herein relate to various structures, integrated assemblies, and memory devices. In some implementations, an integrated assembly includes an array of semiconductive fin structures penetrating through a dielectric region. The integrated assembly includes a semiconductive moat structure along the dielectric region that includes a sidewall structure The sidewall structure includes first segments that are biased inwardly toward the array of semiconductive fin structures and second segments that are biased outwardly away from the array of semiconductive fin structures, where the first segments and second segments alternate along an edge of the dielectric region to form a crenellated profile along a surface of the sidewall structure that faces the dielectric region. The integrated assembly includes an array of conductive line structures that extend across the array of semiconductive fin structures, across the dielectric region, and across the sidewall structure.

Dependencies are inferred from the claim text.