Vibration mitigation in ion implantation

A method, comprising:

• rotating a disk, of an ion implantation apparatus, coupled to a wafer support assembly to revolve one or more semiconductor wafers, supported by the wafer support assembly, along a path;
• emitting, using an ion implanter of the ion implantation apparatus, an ion beam to a beam position along the path;
• determining, using a vibration measurement device, a vibration metric associated with the ion implantation apparatus;
• and
• controlling a position of a first calibration unit coupled to a calibration base of the ion implantation apparatus based upon the vibration metric to reduce a vibration associated with the ion implantation apparatus.

An apparatus, comprising:

• a disk configured to rotate during an ion implantation process;
• a wafer support assembly coupled to the disk and configured to support one or more semiconductor wafers, wherein the rotation of the disk causes movement of the one or more semiconductor wafers;
• an ion implanter configured to introduce dopants to the one or more semiconductor wafers;
• a vibration measurement device configured to determine a vibration metric associated with the apparatus;
• and
• a vibration calibration device comprising:
• a calibration base coupled to the disk;
• and
• a first calibration unit coupled to the calibration base,
• wherein the vibration calibration device is configured to control a position of the first calibration unit based upon the vibration metric.