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US 2026/0101816 A1Published application
Semiconductor device
AssigneeSK hynix Inc.
InventorHyun Soo SHIN
Life of this patent
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Abstract
Embodiments of the present disclosure may provide a semiconductor device including a first chip including a first bonding pad and a first insulating layer, and a second chip disposed on the first chip, and including a second bonding pad bonded to the first bonding pad and a second insulating layer bonded to the first insulating layer, wherein a bonding interface between the first insulating layer and the second insulating layer includes a first step portion disposed around a bonding interface between the first bonding pad and the second bonding pad.
Claims19
A semiconductor device comprising:
- a first chip including a first bonding pad and a first insulating layer;
- and
- a second chip disposed on the first chip, and including a second bonding pad bonded to the first bonding pad and a second insulating layer bonded to the first insulating layer,
- wherein a bonding interface between the first insulating layer and the second insulating layer includes a first step portion disposed around a bonding interface between the first bonding pad and the second bonding pad.
1 more element
A semiconductor device comprising:
- a first chip including a first bonding pad and a first insulating layer having an opening exposing the first bonding pad;
- and
- a second chip including a second bonding pad bonded to the first bonding pad and a second insulating layer bonded to the first insulating layer,
- wherein the second insulating layer includes a protrusion having a side wall bonded to a side wall of the opening in the first insulating layer.
1 more element
Dependencies are inferred from the claim text.