US 2026/0101801 A1 · THERMAL DISTRIBUTION LAYERS IN STACKED SEMICONDUCTOR ARCHITECTURES

Abstract

Methods, systems, and devices for thermal distribution layers in stacked semiconductor architectures are described. A semiconductor system may include a first semiconductor die with first circuitry and a first dielectric material, and a second semiconductor die with second circuitry and a second dielectric material. A third dielectric material, having a higher thermal conductivity than the first and second dielectric materials, may be positioned between the first and second semiconductor dies. The third dielectric material may be in contact with the surfaces of both the first and second semiconductor dies. Conductors may be formed through the third dielectric material and may couple the first circuitry with the second circuitry. The system may include additional contacts and coating materials.

Claims24

Dependent claims

A semiconductor system, comprising:

a first semiconductor die comprising first circuitry, a surface of the first semiconductor die comprising a first dielectric material;
a second semiconductor die comprising second circuitry, a surface of the second semiconductor die comprising a second dielectric material;
a third dielectric material between the first semiconductor die and the second semiconductor die, a first surface of the third dielectric material being in contact with the surface of the first semiconductor die, a second surface of the third dielectric material opposite the first surface being in contact with the surface of the second semiconductor die, and the third dielectric material having a higher thermal conductivity than the first dielectric material and the second dielectric material;
and
a plurality of conductors through the third dielectric material and coupling the first circuitry of the first semiconductor die with the second circuitry of the second semiconductor die.

2 more elements

A method for manufacturing a semiconductor system, comprising:

bonding a first semiconductor component with a first surface of a coupling component based at least in part on bonding a plurality of conductors of the coupling component with a plurality of first contacts of the first semiconductor component at a surface of the first semiconductor component, and on bonding a first dielectric material of the coupling component with a second dielectric material at the surface of the first semiconductor component, a first thermal conductivity of the first dielectric material being higher than a second thermal conductivity of the second dielectric material;
and
bonding a second semiconductor component with a second surface of the coupling component, opposite the first surface, based at least in part on bonding the plurality of conductors of the coupling component with a plurality of second contacts of the second semiconductor component at a surface of the second semiconductor component, and on bonding the first dielectric material of the coupling component with a third dielectric material at the surface of the second semiconductor component, the first thermal conductivity of the first dielectric material being higher than a third thermal conductivity of the third dielectric material.

A method for semiconductor device manufacture, comprising:

forming a first dielectric material over a surface of a first semiconductor component, the first semiconductor component comprising a plurality of first contacts at the surface of the first semiconductor component that are coupled with first circuitry of the first semiconductor component, and a first thermal conductivity of the first dielectric material being higher than a second thermal conductivity of a second dielectric material at the surface of the first semiconductor component;
forming a plurality of conductors through the first dielectric material and in contact with the plurality of first contacts of the first semiconductor component;
and
bonding a second semiconductor component with a surface of first dielectric material opposite the first semiconductor component based at least in part on bonding the plurality of conductors with a plurality of second contacts at a surface of the second semiconductor component, and on bonding the first dielectric material with a third dielectric material at the surface of the second semiconductor component, the first dielectric material having a greater thermal conductivity than the third dielectric material.

1 more element

Dependencies are inferred from the claim text.

Thermal distribution layers in stacked semiconductor architectures

Life of this patent

Thermal distribution layers in stacked semiconductor architectures

Life of this patent

Abstract

Claims24