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US 2026/0101800 A1Published application
Semiconductor device and method of manufacturing semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorTsunehiro NAKAJIMA
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Abstract
A semiconductor device, including: a semiconductor substrate with a main surface; and a surface electrode provided at the main surface of the semiconductor substrate, the surface electrode having a nickel (Ni) film that includes a fibrous-structure Ni film, the fibrous-structure Ni film containing Ni crystal grains grown to form a fibrous shape.
Claims9
A semiconductor device, comprising:
- a semiconductor substrate with a main surface;
- and
- a surface electrode provided at the main surface of the semiconductor substrate, the surface electrode having a nickel (Ni) film that includes a fibrous-structure Ni film, the fibrous-structure Ni film containing Ni crystal grains grown to form a fibrous shape.
A method of manufacturing a semiconductor device having
- a semiconductor substrate with a main surface, and
- a surface electrode provided at the main surface of the semiconductor substrate,
- the method comprising:
- as a deposition process, forming a nickel (Ni) film as the surface electrode, the Ni film being formed at the main surface of the semiconductor substrate, wherein
- the deposition process includes performing a first sputtering at a temperature of 25 degrees C or higher but not more than 50 degrees C.
2 more elements
Dependencies are inferred from the claim text.