Semiconductor structure and method of manufacturing the same

A semiconductor structure, comprising:

• a first blocking member;
• a first conductive element surrounding the first blocking member;
• a second conductive element contacting the first conductive element;
• and
• a dielectric layer surrounding the first conductive element and the second conductive element,
• wherein the first blocking member faces the second conductive element, and a first width of the first blocking member is substantially greater than a second width of the second conductive element.

A method of manufacturing a semiconductor structure, comprising:

• providing a dielectric layer;
• patterning the dielectric layer to form a first opening having a first portion and a second portion connected to the first portion, wherein a blocking member is disposed within the first portion of the first opening;
• disposing a first conductive element into the first portion of the first opening, wherein the blocking member is surrounded by the first conductive element;
• and
• disposing a second conductive element into the second portion of the first opening, wherein the second conductive element is electrically connected to the first conductive element.