Semiconductor device

A semiconductor device, comprising:

• a substrate comprising a chip region and a scribe lane region, the chip region having a plurality of chips arranged in a first direction and in a second direction, the second direction intersecting the first direction, the scribe lane region surrounding the chip region;
• a peripheral circuit structure on the substrate, the peripheral circuit structure comprising a transistor with a gate and an active region;
• a cell structure on the peripheral circuit structure;
• a protective layer on at least a portion of the cell structure;
• and
• a first discharge structure penetrating the cell structure in a third direction, the third direction intersecting each of the first direction and the second direction, the first discharge structure electrically connected to the substrate,
• wherein an upper surface of the first discharge structure is exposed to an outside of the cell structure.

A semiconductor device, comprising:

• a substrate comprising a chip region and a scribe lane region, the chip region having a plurality of chips arranged in a first direction and in a second direction, the second direction intersecting the first direction, a scribe lane region surrounding the chip region;
• a peripheral circuit structure on the substrate, the peripheral circuit structure comprising a transistor with a gate and an active region;
• a cell structure on the peripheral circuit structure;
• a protective layer on an upper surface of the cell structure and covering at least a portion of the cell structure;
• and
• a discharge structure penetrating through the cell structure in a third direction, the third direction crossing each of the first direction and the second direction, an upper surface of the discharge structure not overlapping the protective layer in the third direction and exposed to an outside of the cell structure, and
• the peripheral circuit structure further comprises a peripheral conductive line, the peripheral conductive line electrically connecting a lower surface of the discharge structure to the active region so that electrons flowing through the upper surface of the discharge structure move to the active region of the transistor.