Radiation-hardened semiconductor systems

A memory device, comprising:

• a semiconductor component comprising one or more memory arrays and circuitry operable to access the one or more memory arrays;
• a mold compound material formed over the semiconductor component;
• and
• a shielding layer adhered to a first surface of the mold compound material opposite a second surface having one or more contacts of the memory device, the shielding layer configured to attenuate radiation incidence on the semiconductor component.

A method, comprising:

• bonding a first surface of a semiconductor component with a first surface of a substrate;
• adhering a first shielding layer to a second surface of the semiconductor component opposite the first surface of the semiconductor component, the first shielding layer configured to attenuate radiation incidence on circuitry of the semiconductor component;
• and
• adhering a second shielding layer to a second surface of the substrate opposite the first surface of the substrate, the second shielding layer adhered within an area of the second surface of the substrate corresponding to a position of the semiconductor component on the first surface of the substrate and configured to attenuate radiation incidence on the circuitry of the semiconductor component.