Semiconductor device

A semiconductor device, comprising:

• a substrate including a first region and a second region surrounded by the first region;
• a first interconnection structure on the first region of the substrate;
• and
• a capacitor structure on the second region of the substrate,
• wherein the capacitor structure includes
• a first electrode structure including first portions spaced apart from each other in a first direction and extending in a second direction and a vertical direction,
• a second electrode structure including second portions alternately arranged with the first portions in the first direction and extending in the second direction and the vertical direction, and
• a dielectric capacitor structure between the first portions of the first electrode structure and the second portions of the second electrode structure, and
• wherein the first interconnection structure includes
• a first peripheral interconnection line extending in the second direction,
• a first peripheral contact plug on the first peripheral interconnection line, and
• a first peripheral dielectric structure on a side surface of the first peripheral interconnection line and a side surface of the first peripheral contact plug, and
• wherein the first direction is parallel to an upper surface of the substrate, the second direction is parallel to the upper surface of the substrate and intersects the first direction, and the vertical direction is perpendicular to the upper surface of the substrate and intersects the first direction and the second direction,
• wherein the first peripheral dielectric structure surrounds a side surface of the dielectric capacitor structure,
• wherein the dielectric capacitor structure includes a first dielectric material having a first dielectric constant, and
• wherein the first peripheral dielectric structure includes a second dielectric material having a second dielectric constant lower than the first dielectric constant.

A semiconductor device, comprising:

• a substrate;
• a first circuit element on the substrate;
• contact plugs connected to the first circuit element;
• a first insulating layer on side surfaces of the contact plugs;
• and
• a capacitor structure on the first insulating layer,
• wherein the capacitor structure includes
• a first electrode structure including first portions spaced apart from each other in a first direction parallel to an upper surface of the substrate and extending in a second direction intersecting the first direction, and extending in a vertical direction intersecting the first direction and the second direction,
• a second electrode structure including second portions alternately arranged with the first portions in the first direction and extending in the second direction and in the vertical direction, and
• a dielectric capacitor structure between the first portions of the first electrode structure and the second portions of the second electrode structure,
• wherein the dielectric capacitor structure includes a first dielectric material having a first dielectric constant, and
• wherein the first insulating layer includes a second dielectric material having a second dielectric constant lower than the first dielectric constant.