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US 2026/0101747 A1Published application
Low resistivity metal stacks and methods of depositing the same
AssigneeApplied Materials, Inc.
InventorsZhaoxuan Wang, Wenting Hou, Jianxin Lei
Life of this patent
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Abstract
Metal stacks and methods of depositing a metal stack on a semiconductor substrate are disclosed. The metal stack is formed by depositing a molybdenum (Mo) layer on a semiconductor substrate. The molybdenum (Mo) layer is treated with a silane, followed by formation of a nitride layer on the molybdenum (Mo) layer. A metal stack having low resistivity is formed.
Claims20
A method of depositing a metal stack, the method comprising:
- depositing a molybdenum (Mo) layer on a semiconductor layer to form the metal stack;
- treating the molybdenum (Mo) layer with a silane compound;
- and
- depositing a nitride layer on the molybdenum (Mo) layer.
1 more element
A method of depositing a metal stack, the method comprising:
- depositing a tungsten (W) layer on a substrate;
- depositing a molybdenum (Mo) layer on the tungsten (W) layer;
- the molybdenum (Mo) layer on a top surface of the tungsten (W) layer to form the metal stack;
- etching the metal stack to form at least one feature having a top surface and two opposing sidewalls;
- treating the molybdenum (Mo) layer with a silane compound to passivate the molybdenum (Mo) layer;
- and
- depositing a nitride layer on the molybdenum (Mo) layer.
4 more elements
A metal stack comprising:
- a tungsten (W) layer on a semiconductor substrate;
- a molybdenum (Mo) layer on the tungsten (W) layer;
- a silicon passivation layer on the molybdenum (Mo) layer;
- and
- a nitride layer on the molybdenum (Mo) layer.
2 more elements
Dependencies are inferred from the claim text.