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US 2026/0101743 A1Published application
Bonded device having split bonding layer and methods of formation
AssigneeApplied Materials, Inc.
InventorsSiddarth Krishnan, Michael Patrick Chudzik
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Abstract
A method of forming a bonded device. The method may include providing a carrier substrate, forming, on a first surface of the carrier substrate, a first bonding layer for bonding to a device substrate, and annealing the first bonding layer at a temperature of greater than 600° C.
Claims20
A method of forming a bonded device, comprising:
- providing a carrier substrate;
- forming, on a first surface of the carrier substrate, a first bonding layer for bonding to a device substrate;
- and
- annealing the first bonding layer at a temperature of greater than 600° C.
1 more element
A bonded device, comprising:
- a carrier substrate;
- a device substrate;
- and
- a first bonding layer at an inner surface of the carrier substrate;
- a second bonding layer at an inner surface of the device substrate, the second bonding layer bonded to the first bonding layer,
- wherein the first bonding layer and the second bonding layer comprise a same material, and an average grain size of the first bonding layer is greater than an average grain size of the second bonding layer.
3 more elements
Dependencies are inferred from the claim text.