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US 2026/0101727 A1Published application
Methods of forming semiconductor structures
AssigneeNanya Technology Corporation
InventorWei-Chuan FANG
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Abstract
The present disclosure provides a method of forming a semiconductor structure. The method includes the following operations. A diamond-like carbon hard mask layer is formed on a substrate, in which an absorbance of the diamond-like carbon hard mask layer is smaller than or equal to 0.5. A dielectric anti-reflective coating layer is formed on the diamond-like carbon hard mask layer. A bottom anti-reflective coating layer is formed on the dielectric anti-reflective coating layer.
Claims15
A method of forming a semiconductor structure, comprising:
- forming a diamond-like carbon hard mask layer on a substrate, wherein an absorbance of the diamond-like carbon hard mask layer is smaller than or equal to 0.5;
- forming a dielectric anti-reflective coating layer on the diamond-like carbon hard mask layer;
- and
- forming a bottom anti-reflective coating layer on the dielectric anti-reflective coating layer.
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A method of forming a semiconductor structure, comprising:
- forming an amorphous carbon hard mask layer on first electrodes of capacitors on a substrate, wherein an absorbance of the amorphous carbon hard mask layer is smaller than or equal to 0.5, and an oxide layer is disposed between the first electrodes;
- forming a photoresist layer having an opening on the amorphous carbon hard mask layer;
- and
- etching the amorphous carbon hard mask layer through the opening of the photoresist layer.
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Dependencies are inferred from the claim text.