Method of manufacturing a semiconductor device and semiconductor device manufacturing tool
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPeng-Ting LEE, Hui-Chun LEE, Jan-Liang YANG
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Abstract
A method of manufacturing a semiconductor device includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist layer is selectively exposed to actinic radiation. The photoresist layer is heated after selectively exposing the photoresist layer to actinic radiation. During the heating, the photoresist layer is exposed to an ambient of greater than 45% relative humidity. The photoresist layer is developed after the heating to form a pattern in the photoresist layer.
Claims20
A semiconductor device manufacturing tool, comprising:
- a processing chamber;
- a heating element disposed inside the chamber;
- a plurality of support pins disposed inside the chamber configured to support a semiconductor substrate over the heating element, wherein the plurality of support pins are configured to raise and lower the semiconductor substrate;
- a gas inlet in the processing chamber;
- and
- a controller configured to control:
- a flow rate of a gas supplied through the gas inlet to within a range of 3 L/min to 12 L/min;
- a relative humidity of the gas supplied through the gas inlet so that a relative humidity in the processing chamber is within a range of 75% to 95% relative humidity;
- a temperature of the heating element so that a temperature in the processing chamber ranges from 100° C. to 175° C.;
- and
- motion of the plurality of the support pins along a vertical direction.
A semiconductor device manufacturing tool, comprising:
- a processing chamber;
- a heating element disposed inside the chamber;
- a plurality of support pins disposed inside the chamber configured to support a semiconductor substrate over the heating element, wherein the plurality of support pins are configured to raise and lower the semiconductor substrate;
- a gas showerhead disposed over the heating element;
- and
- a controller configured to control:
- a flow rate of a gas supplied through the gas showerhead to within a range of 3 L/min to 12 L/min;
- a temperature in the processing chamber to within a range of 100° C. to 175° C.;
- a relative humidity in the processing chamber to within a range of 75% to 95% relative humidity;
- and
- motion of the plurality of the support pins along a vertical direction.
A semiconductor device manufacturing tool, comprising:
- a chamber;
- a heating element disposed inside the chamber;
- a plurality of support pins configured disposed inside the chamber to support a semiconductor substrate over the heating element, wherein the plurality of support pins are configured to raise and lower the semiconductor substrate;
- a gas showerhead disposed over the heating element;
- a gas supply;
- a humidifier/dehumidifier connected to a gas supply line connecting the gas supply to the gas showerhead;
- and
- a controller configured to control:
- a relative humidity of the gas supplied through the gas showerhead so that the relative humidity in the chamber ranges from 75% to 95% relative humidity;
- a flow rate of a gas supplied through the gas showerhead to within a range of 3 L/min to 12 L/min;
- a temperature of the heating element so that the temperature in the chamber ranges from 100° C. to 175° C.;
- and
- motion of the plurality of the support pins along a vertical direction.
Dependencies are inferred from the claim text.