Peeling method, wafer production method, and bonded wafer

Abstract

A peeling method of the present invention includes: a laser processing step of forming a processing layer in an SiCN film by applying, to a bonded wafer which includes a first wafer and a second wafer and in which a surface of the first wafer in which a first device and a first bonding film are formed on the surface is bonded to a surface of the second wafer in which a second bonding film including the SiCN film is formed on the surface via the first bonding film and the second bonding film, laser light having a wavelength transmissive to the second wafer from the second wafer side; and a peeling step of peeling the second wafer from the bonded wafer at the processing layer.

Dependencies are inferred from the claim text.