Wafer bonding method and semiconductor structure manufactured using the same

A semiconductor structure comprising:

• a first substrate;
• a semiconductor device disposed on the first substrate;
• a first bonding layer disposed on the first substrate to cover the semiconductor device, the first bonding layer including a first metal oxide-based stack disposed on the semiconductor device and a first metal oxide layer disposed on the first metal oxide-based stack opposite to the semiconductor device, the first metal oxide-based stack including metal nanoparticle layers and metal oxide layers disposed to alternate with one another, the metal oxide layers of the first metal oxide-based stack including a first metal oxide material in a crystalline state, the metal nanoparticle layers of the first metal oxide-based stack including metal nanoparticles, the first metal oxide layer including a second metal oxide material in a crystalline state;
• a second substrate;
• and
• a second bonding layer disposed on the second substrate and including a second metal oxide layer which includes a third metal oxide material in a crystalline state,
• the first substrate and the second substrate being bonded to each other through the first bonding layer and the second bonding layer.

A semiconductor structure comprising:

• a first substrate;
• a semiconductor device disposed on the first substrate;
• a first bonding layer disposed on the first substrate to cover the semiconductor device, the first bonding layer including a first doped metal oxide layer disposed on the first substrate, an undoped metal oxide layer disposed on the first doped metal oxide layer opposite to the semiconductor device, and a first metal oxide layer disposed on the undoped metal oxide layer opposite to the first doped metal oxide layer, the first doped metal oxide layer including a first metal oxide matrix and metal nanoparticles doped into the first metal oxide matrix, the first metal oxide matrix including a first metal oxide material in a crystalline state, the undoped metal oxide layer a second metal oxide material in a crystalline state, the first metal oxide layer including a third metal oxide material in a crystalline state;
• a second substrate;
• and
• a second bonding layer disposed on the second substrate and including a second metal oxide layer which includes a fourth metal oxide material in a crystalline state,
• the first substrate and the second substrate being bonded to each other through the first bonding layer and the second bonding layer.