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US 2026/0101676 A1Published application
Systems and methods for qubit fabrication
AssigneeNew York University
InventorsJavad SHABANI, Kasra SARDASHTI
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Abstract
A method of fabricating a superconducting-semiconducting stack includes cleaning a surface of a substrate, the substrate comprising a group IV element; depositing an insulating buffer layer onto the substrate, the insulating buffer layer comprising the group IV element; depositing a p-doped layer onto the insulating buffer layer; depositing a diffusion barrier onto the p-doped layer; and processing the superconducting-semiconducting stack through dopant activation.
Claims21
-12. (canceled)
A superconducting circuit, comprising:
- a plurality of transistors, each comprising:
- a substrate;
- a first superconducting region disposed on the substrate;
- a second superconducting region disposed on the substrate and separated from the first superconducting region by a p-doped region that is heavily doped;
- a Josephson junction formed by the first superconducting region, the second superconducting region, and the p-doped region;
- and
- a gate electrode configured to tune the Josephson junction.
4 more elements
A circuit, comprising:
- a radio-frequency transmission line;
- and
- a transmon component coupled with the radio-frequency transmission line and comprising a device, the device comprising:
- a substrate;
- a first superconducting region disposed on the substrate;
- a second superconducting region disposed on the substrate and separated from the first superconducting region by a p-doped region that is heavily doped;
- a Josephson junction formed by the first superconducting region, the second superconducting region, and the p-doped region;
- and
- a gate electrode configured to tune the Josephson junction.
6 more elements
Dependencies are inferred from the claim text.