Magnetic memory device and method for manufacturing the same

A method for manufacturing a magnetic memory device, comprising:

• providing a substrate comprising a cell region, a peripheral region, and an interface region between the cell region and the peripheral region;
• forming preliminary information storage patterns on the cell region, the peripheral region, and the interface region of the substrate, wherein the preliminary information storage patterns are spaced apart from each other in first and second directions and each respectively comprise first and second magnetic tunnel junction patterns;
• and
• forming information storage patterns on the cell region and the interface region of the substrate by removing a portion of the preliminary information storage patterns on the interface region of the substrate.

A magnetic memory device comprising:

• a substrate;
• an array comprising information storage patterns that are spaced apart from each other in a first direction and a second direction on the substrate, the information storage patterns comprising magnetic tunnel junction patterns;
• and
• a spacer that extends around at least a portion of the array and is on the substrate,
• wherein the information storage patterns comprise normal information storage patterns at a central portion of the array and dummy information storage patterns at a peripheral portion of the array, and
• wherein the dummy information storage patterns are electrically insulated from conductive elements in the substrate.