Device for Light Detection, an Image Sensor, and a Method for Light Detection

An image sensor, comprising an array of light detecting units, wherein each of a plurality of light detecting units in the array is formed by the device including:

• an active layer configured to generate electrons in response to incident light on the active layer ;
• a silicon layer comprising a diode arrangement configured for collection of the electrons generated by the active layer;
• and
• an interface layer arranged between the active layer and the silicon layer, wherein the interface layer is configured to provide an alignment of a conduction band of electrons between an energy level of the active layer and an energy level of the silicon layer for facilitating transport of the generated electrons from the active layer to the silicon layer.

A method for light detection, said method comprising:

• generating electrons in an active layer in response to incident light on the active layer;
• transferring the electrons through an interface layer to a silicon layer;
• and
• collecting the electrons in a diode arrangement in the silicon layer,
• wherein the interface layer is configured to provide an alignment of a conduction band of electrons between an energy level of the active layer and an energy level of the silicon layer for facilitating transport of the generated electrons from the active layer to the silicon layer.