Semiconductor apparatus and method of manufacturing the same

Abstract

A method of manufacturing a semiconductor apparatus includes: forming a two-dimensional material layer on a substrate layer, wherein the substrate layer includes a nitrogen (N)-polar nitride compound material; forming a plurality of through-holes in the two-dimensional material layer along a thickness direction of the two-dimensional material layer by performing a heat treatment at a process temperature in a process gas atmosphere; epitaxially growing a first semiconductor layer along the thickness direction in the plurality of through-holes of the two-dimensional material layer; and performing epitaxial lateral over-growing, horizontally along a plane perpendicular to the thickness direction, of the first semiconductor layer on the two-dimensional material layer.

Dependencies are inferred from the claim text.