Optoelectronic semiconductor device

Abstract

An optoelectronic semiconductor device includes a base, a semiconductor stack and a light-absorbing layer. The semiconductor stack includes a first semiconductor layer on the base, a second semiconductor layer on the first semiconductor layer, and a light absorbing layer between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer includes a modified region and an unmodified region surrounding the modified region. The bonding structure is between the first semiconductor layer and the base. The first electrode structure is disposed on and connected to the second semiconductor layer. A thickness of the second semiconductor layer is less than or equal to 50 nm.

Dependencies are inferred from the claim text.