Photoelectric converter, solid-state image sensor, and ranging system
AssigneeSony Semiconductor Solutions Corporation
InventorNOBUE MAEKAWA
Life of this patent
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Abstract
A photoelectric converter according to an aspect of the present disclosure includes a semiconductor layer that is a SiGe layer or a Ge layer and a photodiode formed in the semiconductor layer. This solid-state image sensor further includes a transistor and a Si layer. The transistor has a source region and a drain region in the semiconductor layer and has a gate electrode in contact with the semiconductor layer via a gate insulating film. The Si layer is formed at an interface between the semiconductor layer and the gate insulating film.
Claims14
A photoelectric converter comprising:
- a semiconductor layer that is a SiGe layer or a Ge layer;
- a photodiode formed in the semiconductor layer;
- a transistor having a source region and a drain region in the semiconductor layer and having a gate electrode in contact with the semiconductor layer via a gate insulating film;
- and
- a Si layer formed at an interface between the semiconductor layer and the gate insulating film.
A photoelectric converter comprising:
- a semiconductor layer that is a SiGe layer or a Ge layer;
- a photodiode formed in the semiconductor layer;
- a transistor having a source region and a drain region in the semiconductor layer and having a gate electrode extending in the semiconductor layer;
- and
- a Si layer formed at an interface between the semiconductor layer and the gate electrode.
The photoelectric converter according to claim 7, wherein
- the Si layer has a thickness equal to or less than a critical film thickness.
A solid-state image sensor comprising:
- a photoelectric converter for each pixel, wherein
- the photoelectric converter includes:
- a semiconductor layer that is a SiGe layer or a Ge layer;
- a photodiode formed in the semiconductor layer;
- a transistor having a source region and a drain region in the semiconductor layer and having a gate electrode in contact with the semiconductor layer via a gate insulating film;
- and
- a Si layer formed at an interface between the semiconductor layer and the gate insulating film.
A solid-state image sensor comprising:
- a photoelectric converter for each pixel, wherein
- the photoelectric converter includes:
- a semiconductor layer that is a SiGe layer or a Ge layer;
- a photodiode formed in the semiconductor layer;
- a transistor having a source region and a drain region in the semiconductor layer and having a gate electrode extending in the semiconductor layer;
- and
- a Si layer formed at an interface between the semiconductor layer and the gate electrode.
A ranging system comprising:
- a photoelectric converter for each pixel, wherein
- the photoelectric converter includes:
- a semiconductor layer that is a SiGe layer or a Ge layer;
- a photodiode formed in the semiconductor layer;
- a transistor having a source region and a drain region in the semiconductor layer and having a gate electrode in contact with the semiconductor layer via a gate insulating film;
- and
- a Si layer formed at an interface between the semiconductor layer and the gate insulating film.
A ranging system comprising:
- a photoelectric converter for each pixel, wherein
- the photoelectric converter includes:
- a semiconductor layer that is a SiGe layer or a Ge layer;
- a photodiode formed in the semiconductor layer;
- a transistor having a source region and a drain region in the semiconductor layer and having a gate electrode extending in the semiconductor layer;
- and
- a Si layer formed at an interface between the semiconductor layer and the gate electrode.
Dependencies are inferred from the claim text.