Visible and short-wave infrared hybrid sensors

A method for constructing a visible and short-wave infrared (SWIR) sensor, the method comprising:

• etching a trench on a first side of a silicon substrate;
• forming a SWIR photodetector within the trench, wherein the SWIR photodetector is configured to detect SWIR light;
• forming a first deep trench isolation (DTI) on the first side of the silicon substrate;
• forming a second DTI on the first side of the silicon substrate and adjacent to a first side of the SWIR photodetector, wherein a first portion of the silicon substrate positioned between the first DTI and the second DTI forms a silicon photodetector configured to detect visible light;
• forming a third DTI on the first side of the silicon substrate and adjacent to a second side of the SWIR photodetector opposite the first side of the SWIR photodetector;
• removing a second portion of the silicon substrate such that the first DTI, the second DTI, and the third DTI are exposed on a second side of the silicon substrate opposite the first side of the silicon substrate;
• and
• forming a high-K dielectric layer on the second side of the silicon substrate.

An image sensor for visible and short-wave infrared (SWIR) sensing, comprising:

• a pixel array including:
• at least a first deep trench isolation (DTI), a second DTI, and a third DTI formed in a silicon substrate and positioned substantially parallel to each other,
• a silicon photodetector configured to detect visible light and positioned between the first DTI and the second DTI,
• a SWIR photodetector configured to detect SWIR light and positioned between the second DTI and the third DTI,
• a high-K dielectric layer positioned over at least the first DTI, the second DTI, the third DTI, the silicon photodetector, and the SWIR photodetector, and
• a portion of the silicon substrate positioned between the SWIR photodetector and the high-K dielectric layer.