Semiconductor device with isolation structure and method of manufacturing the same

A semiconductor device, comprising:

• a first semiconductive region;
• a second semiconductive region;
• an isolation structure formed between the first semiconductive region and the second semiconductive region and comprising:
• an isolation bottom formed beneath the second semiconductive region and comprises insulating materials;
• and
• an isolation ring with a lower portion connecting the isolation bottom and an upper portion surrounding the second semiconductive region;
• and
• a via array comprising a plurality of inner insulating via formed in the second semiconductive region, on the isolation bottom and surrounded by the isolation structure,
• wherein the isolation ring comprises a doped ring and a plurality of insulating regions formed in the doped ring at intervals, and
• wherein the doped ring has dopants of a conductivity type complementary to that of the first semiconductive region and the second semiconductive region.

A method for manufacturing a semiconductor device, comprising:

• forming an embedded doped region in a substrate;
• forming a plurality of trenches in the substrate and a lateral tunnel in the embedded doped region, which communicate with each other;
• filling the plurality of trenches and the lateral tunnel with insulating materials to form a plurality of insulating regions, at least one inner insulating via and an isolation bottom;
• and
• forming a plurality of doped regions in the substrate between the plurality of insulating regions,
• wherein the substrate is divided into a first semiconductive region and a second semiconductive region by the isolation bottom and an isolation ring including the plurality of insulating regions and the plurality of doped regions.