Gate connection for stacked transistors
AssigneeInternational Business Machines Corporation
InventorsKishwar Mashooq, Shay Reboh, Takashi Ando, Ruilong Xie, Paul Charles Jamison
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Abstract
Embodiments disclose a gate connection for stacked transistors. A semiconductor structure includes an upper transistor having a first work function material disposed over a lower transistor having a second work function material. The semiconductor structure includes a gate connection connecting the first work function material to the second work function material, the gate connection comprising a liner formed of the second work function material.
Claims25
A semiconductor structure comprising:
- an upper transistor having a first work function material disposed over a lower transistor having a second work function material;
- and
- a gate connection connecting the first work function material to the second work function material, the gate connection comprising a liner formed of the second work function material.
A method comprising:
- providing an upper transistor having a first work function material disposed over a lower transistor having a second work function material;
- and
- forming a gate connection connecting the first work function material to the second work function material, the gate connection comprising a liner formed of the second work function material.
A method comprising:
- forming an upper transistor and a lower transistor with a sacrificial material, the upper transistor being over the lower transistor;
- annealing the upper and lower transistors;
- replacing the sacrificial material of the upper transistor with a first work function material;
- forming a trench exposing a sidewall of the first work function material and a portion of the sacrificial material of the lower transistor;
- replacing the sacrificial material of the lower transistor with a second work function material, so as to form a liner of the second work function material in the trench;
- and
- filling the trench with a fill material.
A semiconductor structure comprising:
- an upper transistor having a first work function material disposed over a lower transistor having a second work function material;
- and
- a gate connection connecting the upper transistor to the lower transistor, the gate connection comprising a liner formed of the second work function material and a fill material, the liner intervening between the first work function material and the fill material, wherein the fill material comprises a conductive material or a dielectric material.
A method of forming a semiconductor structure comprising:
- forming an upper transistor having a first work function material;
- forming a lower transistor having a second work function material disposed below the upper transistor;
- and
- forming a gate connection connecting the upper transistor to the lower transistor, the gate connection comprising a liner formed of the second work function material and a fill material, the liner intervening between the first work function material and the fill material, wherein the fill material comprises a conductive material or a dielectric material.
Dependencies are inferred from the claim text.