Semiconductor device

A semiconductor device, comprising:

• a substrate;
• a first channel pattern on the substrate, the first channel pattern having a first width in a first direction;
• a second channel pattern spaced apart from the first channel pattern in the first direction, the second channel pattern having a second width in the first direction;
• a first source/drain pattern on at least one side of the first channel pattern;
• a first source/drain contact on the first source/drain pattern;
• a second source/drain pattern on at least one side of the second channel pattern;
• a second source/drain contact on the second source/drain pattern;
• a third source/drain contact spaced apart from the second source/drain contact in a second direction, the second direction crossing the first direction;
• a contact spacer surrounding a side surface of the second source/drain contact;
• and
• a first contact isolation film between the second source/drain contact and the third source/drain contact and in contact with the contact spacer,
• wherein the second width is greater than the first width.

A semiconductor device, comprising:

• a substrate;
• a first channel pattern on the substrate, the first channel pattern having a first width in a first direction;
• a first gate electrode extending in a second direction on the first channel pattern, the second direction crossing the first direction;
• a first gate capping pattern on an upper surface of the first gate electrode;
• a second channel pattern spaced apart from the first channel pattern in the first direction, the second channel pattern having a second width greater than the first width in the first direction;
• a second gate electrode extending in the second direction on the second channel pattern;
• a second gate capping pattern on an upper surface of the second gate electrode;
• a gate spacer on a side surface of the second gate electrode;
• a source/drain pattern on at least one side of the second channel pattern;
• a first source/drain contact on the source/drain pattern;
• a second source/drain contact spaced apart from the first source/drain contact in the second direction;
• a contact isolation film between the first source/drain contact and the second source/drain contact;
• and
• a contact spacer between the contact isolation film and the first source/drain contact,
• wherein the contact spacer surrounds at least a portion of a side surface of the first source/drain contact, and
• at least a portion of the contact spacer is in contact with a side surface of the gate capping pattern.