Device with integrated trench mosfet and integrated trench schottky barrier diode

A method of making a device including an integrated trench field-effect transistor and an integrated trench Schottky barrier diode, the method comprising:

• providing a volume of semiconductor material including a first end and a second end;
• making the integrated trench field-effect transistor including –
• providing a source at the first end of the volume of semiconductor material,
• providing a drain,
• providing a body located adjacent to the source,
• providing a body contact adjacent to the body,
• etching a first trench extending into the first end of the volume of semiconductor material, and
• providing a gate within the first trench;
• making the integrated trench Schottky barrier diode located at the first end of the volume of semiconductor material adjacent to and spaced apart from the integrated trench field-effect transistor, the operation of making the integrated trench Schottky barrier diode including –
• etching a second trench extending into the semiconductor material adjacent to and spaced apart from the gate, and
• lining at least part of the second trench with a Schottky material;
• and
• providing an electrical terminal electrically connecting the source, the body via the body contact, and the integrated trench Schottky barrier diode,
• the operation of providing the electrical terminal including extending the electrical terminal into the second trench.