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US 2026/0101563 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeRenesas Electronics Corporation
InventorsHideki OSADA, Tadashi YAMAGUCHI
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Abstract
A semiconductor device includes an insulating film, a metal film, and an adhesion intermediate film arranged between the insulating film and the metal film, and the adhesion intermediate film includes a first adhesion layer, a stress control layer, a second adhesion layer, and a barrier metal layer, which are mutually different and are arranged sequentially in a direction from the insulating film toward the metal film. The insulating film may contain silicon oxide.
Claims20
A semiconductor device comprising:
- an insulating film;
- a metal film;
- and
- an adhesion intermediate film arranged between the insulating film and the metal film,
- wherein the adhesion intermediate film includes:
- a first adhesion layer;
- a stress control layer;
- a second adhesion layer;
- and
- a barrier metal layer, and
- wherein the first adhesion layer, the stress control layer, the second adhesion layer and the barrier metal layer are mutually different and are arranged sequentially in a direction from the insulating film toward the metal film.
8 more elements
A method of manufacturing a semiconductor device, the method comprising:
- forming an insulating film;
- forming an adhesion intermediate film on the insulating film;
- and
- forming a metal film on the adhesion intermediate film,
- wherein in forming the adhesion intermediate film, the adhesion intermediate film includes a first adhesion layer, a stress control layer, a second adhesion layer, and a barrier metal layer, and
- wherein the first adhesion layer, the stress control layer, the second adhesion layer, and the barrier metal layer are mutually different and are arranged sequentially in a direction from the insulating film toward the metal film.
3 more elements
Dependencies are inferred from the claim text.