Semiconductor device comprising gallium nitride layer and method for manufacturing same

A semiconductor device comprising:

• a substrate;
• a semiconductor material layer on the substrate;
• a dielectric layer on the semiconductor material layer;
• a first field plate portion and a second field plate portion arranged in the dielectric layer and spaced apart from each other;
• a first portion of the dielectric layer arranged between the first field plate portion and the second field plate portion;
• a first protruding portion on the first field plate portion;
• a second protruding portion on the second field plate portion;
• and
• a first connection portion arranged on the first portion of the dielectric layer and connecting the first protruding portion and the second protruding portion.

A method for manufacturing a semiconductor device, comprising:

• providing a substrate on which a dielectric layer is formed and in which a gate electrode is formed in the dielectric layer;
• forming a mask layer on the substrate, the mask layer including a first slit having a first width and a second slit having a second width, wherein the first width and the second width are different from each other;
• removing a portion of each of the portions of the dielectric layer exposed by the first slit and the second slit, respectively, to form a first recess by the first slit and a second recess by the second slit in the dielectric layer;
• removing the mask layer;
• and
• forming a field plate that fills the first recess and the second recess and covers a portion of an upper surface of the dielectric layer.