Backside replacement metal gate for stacked transistors
AssigneeInternational Business Machines Corporation
InventorsShravana Kumar Katakam, Ruilong Xie, Takashi Ando, Viswas Purohit, Kishwar Mashooq, Shay Reboh, Paul Charles Jamison
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Abstract
Embodiments include a semiconductor structure including an upper transistor having a first work function material disposed over a lower transistor. The lower transistor includes a gate dielectric material and a second work function material such that a bottom portion of the gate dielectric material has an opening. An extension of the second work function material extends through the opening.
Claims20
A semiconductor structure comprising:
- an upper transistor having a first work function material disposed over a lower transistor, the lower transistor comprising a gate dielectric material and a second work function material such that a bottom portion of the gate dielectric material comprises an opening;
- wherein an extension of the second work function material extends through the opening.
A method comprising:
- providing an upper transistor having a first work function material disposed over a lower transistor, the lower transistor comprising a gate dielectric material with an opening in a bottom portion;
- and
- forming the lower transistor with a second work function material such that an extension of the second work function material extends through the opening.
A method of forming a semiconductor structure, the method comprising:
- forming an upper transistor above a lower transistor, the upper transistor comprising a first work function material filled from a first side of the semiconductor structure;
- and
- filling the lower transistor with a second work function material from a second side opposite the first side of the semiconductor structure.
Dependencies are inferred from the claim text.