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US 2026/0101550 A1Published application
Semiconductor devices with mixed channel
AssigneeAvago Technologies International Sales Pte. Limited
InventorQing Liu
Life of this patent
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Abstract
A semiconductor device with a mixed channel that is suitable for operability under high operating voltages (e.g., 2.5 volts to 3.3 volts). The semiconductor device includes a drain; a source; a channel comprising a first nanosheet and a second nanosheet; sacrificial layer disposed between the first nanosheet and the second nanosheet; and a gate formed around the channel.
Claims20
A semiconductor device, comprising:
- a drain;
- a source;
- a channel comprising a first nanosheet and a second nanosheet;
- a sacrificial layer disposed between the first nanosheet and the second nanosheet;
- and
- a gate formed around the channel.
3 more elements
A semiconductor device, comprising:
- a drain;
- a source;
- a channel comprising a first nanosheet, a second nanosheet, and a third nanosheet;
- a first sacrificial layer disposed between the first nanosheet and the second nanosheet;
- a second sacrificial layer disposed between the second nanosheet and the third nanosheet;
- and
- a gate formed around the channel.
4 more elements
A circuit, comprising:
- a substrate;
- and
- a semiconductor device formed on the substrate, the semiconductor device comprising:
- a drain;
- a source;
- a channel comprising a first nanosheet and a second nanosheet;
- a sacrificial layer disposed between the first nanosheet and the second nanosheet;
- and
- a gate formed around the channel.
6 more elements
Dependencies are inferred from the claim text.