US 2026/0101549 A1 · PLACEHOLDER FOR BACKSIDE CONTACT

Abstract

Embodiments of present invention provide a semiconductor structure. The semiconductor structure includes a transistor having a first and a second source/drain (S/D) region; a backside contact in contact with a bottom surface of the first S/D region; and a placeholder underneath the second S/D region, where the placeholder includes a first portion and a second portion on top of the first portion; the first portion being embedded in a backside interlevel-dielectric (BILD) layer; the second portion being at least partially surrounded by a dielectric liner; and a top section of the second portion being above the top surface of the BILD layer and surrounded by an airgap.

Claims20

Dependent claims

A semiconductor structure comprising:

a transistor having a first and a second source/drain (S/D) region;
a backside contact in contact with a bottom surface of the first S/D region;
and
a placeholder underneath the second S/D region,
wherein the placeholder includes a first portion and a second portion on top of the first portion;
the first portion being embedded in a backside interlevel-dielectric (BILD) layer;
the second portion being at least partially surrounded by a dielectric liner;
and a top surface of the second portion being above a top surface of the BILD layer.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application

18/910,315Filed 9 Oct 2024

Published

9 Apr 2026

Term ends

Not estimatedThe source records don’t support an estimate.

Classification17 codes

H10D 30/0198
Of FETs having stacked nanowire, nanosheet or nanoribbon channels: forming source or drain electrodes wherein semiconductor bodies are replaced by…
H10D 62/116
Dielectric isolations, e.g. air gaps: adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
H10D 30/0195
Of FETs having stacked nanowire, nanosheet or nanoribbon channels: forming inner spacers between adjacent channels, e.g. changing their shapes or…
H10D 30/506
Wherein the stacked channels have different properties: having different thicknesses, sizes or shapes

Placeholder for backside contact

Life of this patent

Placeholder for backside contact

Life of this patent

Abstract

Claims20